Title :
Characterization of the switching parameters in the dual-channel double Heterostructure Optoelectronic switch
Author :
Opper, H. ; Cai, J. ; Garber, R.B. ; Basilica, R. ; Taylor, G.W.
Author_Institution :
Dept. of Electron. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
fDate :
7/1/2004 12:00:00 AM
Abstract :
A new three-terminal switching device utilizing two modulation-doped heterointerfaces to achieve electron and hole symmetries is investigated. The switching voltage is investigated by varying the critical barrier-doping parameters and capacitor spacings over a range of practical values. The experimental dependence upon current injection into the electron field-effect channel is characterized. Both two- and three-terminal device measurements are compared with a recent theoretical model, and show excellent correlation.
Keywords :
elemental semiconductors; integrated optoelectronics; metal-semiconductor-metal structures; optical interconnections; optical polymers; optical waveguides; photodetectors; silicon; I/O interconnections; Ti-Si-Ti; cross-sectional geometry; metal-semiconductor-metal photodetectors; optical polymer pillars chip; optical waveguides; packaging; photo-to-dark current ratio; pillar integration; polymer pillar waveguides; polymer waveguides; process integration; Doping; Electrons; Epitaxial layers; Etching; Gallium arsenide; Laser theory; Optical devices; Semiconductor process modeling; Switches; Thyristors; Modulation doping; optoelectronic switching; thyristor;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.830640
