Characterization of the switching parameters in the dual-channel double Heterostructure Optoelectronic switch

Author

Opper, H. ; Cai, J. ; Garber, R.B. ; Basilica, R. ; Taylor, G.W.

Author_Institution

Dept. of Electron. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA

Volume

51

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

1091

Lastpage

1094

Abstract

A new three-terminal switching device utilizing two modulation-doped heterointerfaces to achieve electron and hole symmetries is investigated. The switching voltage is investigated by varying the critical barrier-doping parameters and capacitor spacings over a range of practical values. The experimental dependence upon current injection into the electron field-effect channel is characterized. Both two- and three-terminal device measurements are compared with a recent theoretical model, and show excellent correlation.

Keywords

elemental semiconductors; integrated optoelectronics; metal-semiconductor-metal structures; optical interconnections; optical polymers; optical waveguides; photodetectors; silicon; I/O interconnections; Ti-Si-Ti; cross-sectional geometry; metal-semiconductor-metal photodetectors; optical polymer pillars chip; optical waveguides; packaging; photo-to-dark current ratio; pillar integration; polymer pillar waveguides; polymer waveguides; process integration; Doping; Electrons; Epitaxial layers; Etching; Gallium arsenide; Laser theory; Optical devices; Semiconductor process modeling; Switches; Thyristors; Modulation doping; optoelectronic switching; thyristor;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.830640

Filename

1308631