Title :
A low-cost fully self-aligned SiGe BiCMOS technology using selective epitaxy and a lateral quasi-single-poly integration concept
Author :
Tilke, Armin T. ; Rochel, Markus ; Berkner, Jöorg ; Rothenhausser, S. ; Stahrenberg, Knut ; Wiedemann, Jöorg ; Wagner, Cajetan ; Dahl, Claus
Author_Institution :
Infineon Technol., Dresden, Germany
fDate :
7/1/2004 12:00:00 AM
Abstract :
We present a low-cost concept for a self-aligned SiGe heterojunction bipolar transistor (HBT). In conventional double-poly HBTs, the base link is formed by use of a sacrificial layer to grow the SiGe epitaxy between an external base polysilicon and the silicon substrate, resulting in a vertical base link. In this concept, the SiGe epitaxy is laterally connected to the extrinsic base poly forming a short and fully self-aligned base link. While strongly reducing process complexity, this concept maintains a minimal link resistance between the internal and the external base. We demonstrate the integration of this HBT with balanced dc and ac performance in a 0.25-μm bipolar complementary metal-oxide-semiconductor technology, featuring all passive devices necessary for RF design. The bipolar multitransistor yield shows similar values compared to our conventional double-poly integration concept.
Keywords :
MOSFET; isolation technology; silicon-on-insulator; MOSFET; SDOI structure analysis; SDOI structure optimization; elevated source/drain structure; gate delay; gate spacer thickness; gate-to-drain Miller capacitance; oxide shallow trench isolation; parasitic junction capacitance; power consumption; series resistance; short channel short channel effects; silicon-on-insulator-like S/D structure; source/drain-on-insulator structure; BiCMOS integrated circuits; CMOS technology; Electric resistance; Epitaxial growth; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Silicon germanium; Space technology; BiCMOS; Bipolar complementary metal–oxide–semiconductor; SiGe; SiGe epitaxy; silicon-germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.829879
