Title :
Polysilicon TFT structures for kink-effect suppression
Author :
Mariucci, L. ; Fortunato, G. ; Bonfiglietti, A. ; Cuscuná, M. ; Pecora, A. ; Valletta, A.
Author_Institution :
Inst. di Fotonica & Nanotecnologie-CNR, Rome, Italy
fDate :
7/1/2004 12:00:00 AM
Abstract :
Experimental results and numerical simulations of asymmetric fingered polysilicon thin-film transistors (AF-TFTs) are analyzed in detail. In the AF-TFTs, the transistor channel region is split into two zones with different lengths separated by a floating n+ region. This structure allows an effective reduction of the kink effect depending on the relative length of the two subchannels, without introducing any additional series resistance. In addition, an appreciable reduction of the leakage current is also observed. The AF-TFTs characteristics have been analyzed by two-dimensional numerical simulation and by modeling the device with two transistors in series. This model clarifies the mechanisms of kink effect suppression in AF-TFT. On the basis of this analysis, two new modified device structures for kink-effect suppression are also proposed and discussed.
Keywords :
SPICE; capacitance measurement; chemical vapour deposition; circuit CAD; integrated circuit design; integrated circuit interconnections; 100 nm; SPICE; aluminum metal lines; aluminum/TEOS process; backend processes; backend simulations; capacitance extraction; charge-based capacitance measurements; chemical mechanical planarization; chemical vapor deposition; computer-aided design; dry etching; flat wafer surface; integrated circuit design; integrated circuit interconnections; interconnect capacitances; level-set method; line width; line-to-line space; metal combination; scanning electron microscope; time delays; titanium nitride local interconnects; topography simulation; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Circuits; Electric variables; Helium; Leakage current; Numerical simulation; Plasma temperature; Silicon; Thin film transistors; Kink-effect; TFTs; leakage current; polycrystalline silicon; thin-film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.829860
