Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs

Author

Olsen, Sarah H. ; O´Neill, Anthony G. ; Driscoll, Luke S. ; Chattopadhyay, Sanatan ; Kwa, Kelvin S.K. ; Waite, Andrew M. ; Tang, Yue T. ; Evans, Alan G R ; Zhang, Jing

Author_Institution

Sch. of Electr. Electron., & Comput. Eng., Univ. of Newcastle, UK

Volume

51

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

1156

Lastpage

1163

Abstract

On-state and off-state performance of strained-Si-SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220% are demonstrated for strained-Si-SiGe devices compared with Si controls. Device performance is found to peak using a virtual substrate composition of Si_0.75Ge_0.25. MOSFET fabrication used high thermal budget processing and good gate oxide quality has been maintained for virtual substrates having Ge compositions up to 30%. Off-state characteristics are found to be more sensitive to strain relaxation than on-state characteristics.

Keywords

MOSFET; Monte Carlo methods; ballistic transport; electron backscattering; nanotechnology; semiconductor device models; silicon-on-insulator; MOS devices; Monte Carlo methods; back-scattering; ballistic transport; double-gate MOSFET; electron scattering; nanotechnology; nonequilibrium transport; semiconductor device modeling; silicon-on-insulator; ultrashort-channel transistors; CMOS technology; Capacitive sensors; Fabrication; Germanium alloys; Germanium silicon alloys; MOSFET circuits; Performance gain; Silicon germanium; Strain control; Transconductance; Drain current enhancement; SiGe; mobility enhancement; n-MOSFETs; silicon-germanium; strained-Silicon; thermal budget; transconductance enhancement; virtual substrate;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.830656

Filename

1308641