Title :
Effects of dopants on disordering of AlGaAs-GaAs superlattice by zinc diffusion
Author :
Wu, Yao-Hwa ; Werner, Michael ; Wang, Shuhui ; Flood, J. ; Merz, J.L.
Author_Institution :
University of California, Department of Electrical Engineering & Computer Sciences, and Electronics Research Laboratory, Berkeley, USA
Abstract :
Low-temperature photoluminescence and SEM are used to study the effects of annealing and Zn-diffusion on the doped Al0.3Ga0.7As-GaAs superlattices grown by molecular beam epitaxy. It is found that annealing has little effect on the Al-Ga interdiffusion. The photoluminescence spectra from both an unannealed and a Zn-diffused superlattice doped with Be and Sn in the wells and barriers, respectively, show peaks from the GaAs wells and the Al0.3Ga0.7As barriers. The SEM picture also shows that the superlattice remains intact with Zn-diffusion.
Keywords :
III-V semiconductors; aluminium compounds; annealing; diffusion in solids; gallium arsenide; interface structure; luminescence of inorganic solids; photoluminescence; scanning electron microscope examination of materials; semiconductor doping; semiconductor epitaxial layers; semiconductor superlattices; AlGaAs-GaAs superlattice; Be doping; III-V semiconductor; SEM; Sn doping; Zn diffusion; annealing; disordering; dopants; interdiffusion; molecular beam epitaxy; photoluminescence; quantum wells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860081
