Title :
Thin-Film Bulk Acoustic Wave Resonator Floating Above CMOS Substrate
Author :
Campanella, Humberto ; Cabruja, Enric ; Montserrat, Josep ; Uranga, Arantxa ; Barniol, Nuria ; Esteve, Jaume
Author_Institution :
Univ. Autonoma de Barcelona, Barcelona
Abstract :
A thin-film bulk acoustic wave resonator (FBAR) having a floating, 3-D structure above a CMOS substrate is presented. The integration of the FBAR to the CMOS substrate is performed with independence of FBAR or CMOS fabrication technologies. Wafer-level transfer is carried out to obtain a suspended FBAR above CMOS substrates of different technologies, whose resonant frequency is found in the 2.4 GHz band. The electrical interconnection between the FBAR and CMOS is provided by at least two conducting posts, which at the same time offer mechanical support to the resonator´s structure. Experimental characterization results and Q-factor comparison with conventional FBAR technologies are discussed.
Keywords :
CMOS integrated circuits; UHF integrated circuits; acoustic microwave devices; acoustic resonators; bulk acoustic wave devices; thin film devices; 3D structure; CMOS substrate; FBAR; Wafer-level transfer; conducting posts; frequency 2.4 GHz; resonant frequency; thin-film bulk acoustic wave resonator; Acoustic waves; CMOS integrated circuits; CMOS process; CMOS technology; Fabrication; Film bulk acoustic resonators; Integrated circuit interconnections; Monolithic integrated circuits; Substrates; Transistors; Acoustic resonators; bulk acoustic wave devices; film bulk acoustic wave resonator (FBAR); heterogeneous CMOS integration;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.910751
