Title :
Properties of Al-SrTiO3-ITO capacitors for microelectronic device applications
Author :
Konofaos, N. ; Evangelou, E.K. ; Wang, Z. ; Helmersson, U.
Author_Institution :
Comput. Eng. & Informatics Dept., Univ. of Patras, Greece
fDate :
7/1/2004 12:00:00 AM
Abstract :
Growth of SrTiO3 (STO) thin films on indium tin oxide (ITO) substrates took place by RF magnetron sputtering under various deposition conditions. Subsequent Al metallization created metal-insulator-metal (MIM) capacitors. The properties of such capacitors were investigated by means of structural and electrical measurements, revealing the films transparency, the dielectric constant, the switching time characteristics, and the trapped charges density. Dielectric constant values as high as 120 were obtained for low frequencies of around 2 kHz, the switching time was found to be 3.2 μs and the trapped charges were found equal to 2.9 nCcm-2. The results showed that the films were suitable for use in electronic devices where high capacitance is required and for potential applications in optical devices.
Keywords :
MIM devices; aluminium; dielectric thin films; indium compounds; micromechanical devices; sputter deposition; strontium compounds; thin film capacitors; 3.2 mus; Al metallization; Al-SrTiO3-InSnO; Al-SrTiO3-ITO; Al-SrTiO3-ITO capacitors; ITO substrates; MIM capacitors; RF magnetron sputtering; STO thin film growth; barium titanate; capacitance; deposition conditions; dielectric constant values; electrical measurement; electrical properties; electronic devices; films transparency; high-K dielectrics; indium tin oxide; metal-insulator-metal capacitors; microelectronic device applications; optical devices; structural measurement; switching time; trapped charges density; Density measurement; Dielectric constant; Dielectric substrates; Dielectric thin films; Indium tin oxide; MIM capacitors; Metal-insulator structures; Metallization; Radio frequency; Sputtering; Barium titanate; ITO; MIM; capacitors; electrical properties; high-$kappa$ dielectrics; indium tin oxide; metal–insulator–metal; sputtering; thin films;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.829900
