Fast and reliable tunnel programming of nanocrystal nonvolatile memories

Author

Puzzilli, G. ; Caputo, D. ; Irrera, F.

Author_Institution

Dept. of Electron., Univ. of Rome "La Sapienza", Italy

Volume

51

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

1205

Lastpage

1207

Abstract

In this brief, we applied the technique of pulsed Fowler-Nordheim programming to Flash memories with silicon nanocrystals as discrete storage nodes. The waveform was optimized with respect to program time and oxide reliability, starting from a systematic study of the trap dynamics. The goal of a fast programming was successfully achieved, with a slight increase of the program voltage, without degrading the stress-induced leakage current (SILC) and endurance.

Keywords

circuit optimisation; elemental semiconductors; flash memories; leakage currents; nanostructured materials; semiconductor device reliability; silicon; tunnelling; Si; discrete storage nodes; flash memories; nanocrystal nonvolatile memories; oxide reliability; program time; program voltage; pulsed Fowler-Nordheim programming; silicon nanocrystals; stress-induced leakage current; trap dynamics; tunnel programming; waveform optimization; Degradation; Electron traps; Flash memory; Leakage current; Nanocrystals; Nonvolatile memory; Pulse measurements; Silicon; Stress; Voltage; DSNs; FN; Fowler–Nordheim; NVMs; nonvolatile memories; silicon nanocrystals; tunnel programming; with discrete storage nodes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.829898

Filename

1308650