Title :
Fast and reliable tunnel programming of nanocrystal nonvolatile memories
Author :
Puzzilli, G. ; Caputo, D. ; Irrera, F.
Author_Institution :
Dept. of Electron., Univ. of Rome "La Sapienza", Italy
fDate :
7/1/2004 12:00:00 AM
Abstract :
In this brief, we applied the technique of pulsed Fowler-Nordheim programming to Flash memories with silicon nanocrystals as discrete storage nodes. The waveform was optimized with respect to program time and oxide reliability, starting from a systematic study of the trap dynamics. The goal of a fast programming was successfully achieved, with a slight increase of the program voltage, without degrading the stress-induced leakage current (SILC) and endurance.
Keywords :
circuit optimisation; elemental semiconductors; flash memories; leakage currents; nanostructured materials; semiconductor device reliability; silicon; tunnelling; Si; discrete storage nodes; flash memories; nanocrystal nonvolatile memories; oxide reliability; program time; program voltage; pulsed Fowler-Nordheim programming; silicon nanocrystals; stress-induced leakage current; trap dynamics; tunnel programming; waveform optimization; Degradation; Electron traps; Flash memory; Leakage current; Nanocrystals; Nonvolatile memory; Pulse measurements; Silicon; Stress; Voltage; DSNs; FN; Fowler–Nordheim; NVMs; nonvolatile memories; silicon nanocrystals; tunnel programming; with discrete storage nodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.829898
