Obtaining isothermal data for HBT

Author

Frégonése, S. ; Zimmer, T. ; Mnif, H. ; Baureis, P. ; Maneux, C.

Author_Institution

Lab. de Microelectronique IXL, Univ. of Bordeaux, Talence, France

Volume

51

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

1211

Lastpage

1214

Abstract

A new measurement method to obtain isothermal electrical characteristics is presented. Heterojunction bipolar transistor (HBT) dc and S-parameter measurements are performed for different chuck temperatures. Knowing the thermal impedance of the device, all the isothermal dc and ac data can be determined. The effectiveness of the method is highlighted by comparing the results with a pulsed measurement system. This new method can be applied with standard measurement equipment.

Keywords

S-parameters; heterojunction bipolar transistors; semiconductor device measurement; thermal resistance measurement; HBT; S-parameter measurement; chuck temperatures; dc measurement; device thermal impedance; heterojunction bipolar transistor; isothermal data; isothermal electrical characteristics; measurement equipment; measurement method; pulsed measurement system; self-heating; Electric variables; Electric variables measurement; Heterojunction bipolar transistors; Impedance; Isothermal processes; Measurement standards; Performance evaluation; Pulse measurements; Scattering parameters; Temperature; HBT; Heterojunction bipolar transistor; isothermal; self-heating; thermal; transistor;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.830636

Filename

1308652