Radio-Frequency-Noise Characterization and Modeling of Type-II InP–GaAsSb DHBT

Author

Chuang, Yu-Ju ; Cimino, Kurt ; Stuenkel, Mark ; Snodgrass, William ; Feng, Milton

Author_Institution

Univ. of Illinois at Urbana-Champaign, Urbana

Volume

29

Issue

1

fYear

2008

Firstpage

21

Lastpage

23

Abstract

This letter presents the first characterization of radio-frequency noise of type-II InP-GaAsSb double-heterojunction bipolar transistors (DHBTs) from 2 to 24 GHz. Its small-signal noise equivalent model is developed and verified with the experimental data. The noise performance of the type-II InP-GaAsSb HBT is also compared with the type-I InP-InGaAs HBT with similar cutoff frequencies larger than 300 GHz. The analysis shows that the particular type-II transistor under test has higher noise than its counterpart type-I device primarily due to the difference of dc current gain.

Keywords

III-V semiconductors; UHF bipolar transistors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device noise; InP-GaAsSb; cutoff frequencies; dc current gain; double-heterojunction bipolar transistors; frequency 2 GHz to 24 GHz; radio-frequency-noise characterization; small-signal noise equivalent model; Circuit noise; Contact resistance; Cutoff frequency; DH-HEMTs; Electrical resistance measurement; Heterojunction bipolar transistors; Low-frequency noise; Noise figure; Noise measurement; Radio frequency; Heterojunction bipolar transistors (HBTs); noise measurement; noise model;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.912017

Filename

4408724