High Voltage (3130 V) 4H-SiC Lateral p-n Diodes on a Semiinsulating Substrate

High-voltage 4H-SiC lateral p-n diodes based on the superjunction principle are fabricated on a semiinsulating substrate for the first time. Experimental results reveal that the length of the field plates on the cathode side and the location of the anode contact are crucial in obtaining a high breakdown voltage. The BV²/R _on of these devices is 19 MW/cm². The best achieved blocking voltage is 3130 V, which is the highest value ever reported on SiC lateral devices.