• DocumentCode
    1020088
  • Title

    The Matrix Balun—A Transistor-Based Module for Broadband Applications

  • Author

    Ferndahl, Mattias ; Vickes, Hans-Olof

  • Author_Institution
    Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg
  • Volume
    57
  • Issue
    1
  • fYear
    2009
  • Firstpage
    53
  • Lastpage
    60
  • Abstract
    In this paper the analysis and design of a new active balun with very broadband performance, the matrix balun, are reported. Measured results show a common mode rejection ratio, CMRR, larger than 15 dB between 4 and 42 GHz while exhibiting 2 dB single-ended gain with a ripple of 1 dB. The balun was realized in a 0.15 mum GaAs mHEMT process. It occupies a chip area of 0.63 mm2 and consumes a dc power of 20 mW. The same matrix balun circuit may also be biased for amplification and used as a matrix amplifier. The circuit then exhibits 10.5 dB gain up to 63 GHz with 1 dB ripple above 5.5 GHz and a power consumption of 67 mW.
  • Keywords
    baluns; gallium arsenide; high electron mobility transistors; GaAs; amplification; broadband applications; chip area; common mode rejection ratio; dc power; frequency 4 GHz to 42 GHz; mHEMT process; matrix amplifier; matrix balun circuit; power 20 mW; power consumption; size 0.15 mum; transistor-based module; Balun; broadband;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2008.2008935
  • Filename
    4696054