DocumentCode :
1020088
Title :
The Matrix Balun—A Transistor-Based Module for Broadband Applications
Author :
Ferndahl, Mattias ; Vickes, Hans-Olof
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg
Volume :
57
Issue :
1
fYear :
2009
Firstpage :
53
Lastpage :
60
Abstract :
In this paper the analysis and design of a new active balun with very broadband performance, the matrix balun, are reported. Measured results show a common mode rejection ratio, CMRR, larger than 15 dB between 4 and 42 GHz while exhibiting 2 dB single-ended gain with a ripple of 1 dB. The balun was realized in a 0.15 mum GaAs mHEMT process. It occupies a chip area of 0.63 mm2 and consumes a dc power of 20 mW. The same matrix balun circuit may also be biased for amplification and used as a matrix amplifier. The circuit then exhibits 10.5 dB gain up to 63 GHz with 1 dB ripple above 5.5 GHz and a power consumption of 67 mW.
Keywords :
baluns; gallium arsenide; high electron mobility transistors; GaAs; amplification; broadband applications; chip area; common mode rejection ratio; dc power; frequency 4 GHz to 42 GHz; mHEMT process; matrix amplifier; matrix balun circuit; power 20 mW; power consumption; size 0.15 mum; transistor-based module; Balun; broadband;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2008.2008935
Filename :
4696054
Link To Document :
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