DocumentCode
1020153
Title
Junction-current-confinement planar 1.3 μm InGaAsP/InP surface-emitting LEDs
Author
Rezek, E.A. ; Yow, L. ; Burghard, A. ; Figueroa, L.
Author_Institution
TRW Electro Optics Research Centre, Redondo Beach, USA
Volume
22
Issue
3
fYear
1986
Firstpage
149
Lastpage
150
Abstract
A new high-power high-efficiency 1.3 μm surface-emitting InGaAsP/InP LED has been obtained by utilising a reverse-biased InP homojunction to achieve efficient confinement of injected current into the InGaAsP emitting area. The devices are grown by a two-step LPE process. At 20 mA, output powers ≫400 μW are obtained; over 1.5 mW is obtained at 100 mA. A 3 dB modulation frequency ≫60 MHz is obtained at 115 mA.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; InGaAsP/InP surface-emitting LEDS; junction current confinement; modulation frequency 60 MHz; reverse-biased InP homojunction; two-step LPE; wavelength 1.3 microns;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860104
Filename
4256290
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