• DocumentCode
    1020163
  • Title

    Injection locking of a 1.3 μm laser diode to an LiNdP4O12 laser yields narrow linewidth emission

  • Author

    Telle, Harald R.

  • Author_Institution
    Physikalsich-Technische Bundesanstalt, Braunschweig, West Germany
  • Volume
    22
  • Issue
    3
  • fYear
    1986
  • Firstpage
    150
  • Lastpage
    152
  • Abstract
    A multi-longitudinal-mode InGaAsP laser diode was injection-locked to a low-power LiNdP4O12 laser operating at 1.319 μm. A net gain of 24 dB was measured with -28 dBm of injection power. The beat spectrum between the acousto-optically frequency-shifted LiNdP4O12 laser output and the laser diode output displays a 40 dB carrier to pedestal ratio (in 300 kHz bandwidth) under these conditions.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser mode locking; lithium compounds; neodymium compounds; semiconductor junction lasers; solid lasers; spectral line breadth; InGaAsP laser diode; acoustooptic frequency shift; beat spectrum; injection locking; narrow linewidth emission; net gain 24 dB; semiconductor laser; wavelength 1.3 microns;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860105
  • Filename
    4256291
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1020163