DocumentCode
1020281
Title
The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of HfO2 MOSFET Devices
Author
Park, Hokyung ; Jo, Minseok ; Choi, Hyejung ; Hasan, Musarrat ; Choi, Rino ; Kirsch, Paul D. ; Kang, Chang Young ; Lee, Byoung Hun ; Kim, Tae-Wook ; Lee, Takhee ; Hwang, Hyunsang
Author_Institution
Gwangju Inst. of Sci. & Technol., Gwangju
Volume
29
Issue
1
fYear
2008
Firstpage
54
Lastpage
56
Abstract
To understand the influence of oxygen vacancies in on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO2 with large-area device and conducting atomic force microscopy (C-AFM). Unlike with the large-area analysis with typical capacitor and transistor, a clear evidence of oxygen vacancy was observed in nanoscale-area measurement using the C-AFM. Similar observations were made in various postdeposition annealing ambients to investigate the generation and reduction of oxygen vacancy in HfO2 . With optimized postdeposition annealing for oxygen vacancy, significantly reduced charge trapping was observed in HfO2 nMOSFET.
Keywords
MOSFET; annealing; atomic force microscopy; hafnium compounds; nanotechnology; oxygen; semiconductor device reliability; HfO2; MOSFET devices; conducting atomic force microscopy; electrical characteristics; nanoscale nonuniformity; oxygen vacancy; postdeposition annealing; reliability characteristics; Annealing; Atomic force microscopy; Atomic measurements; CMOS process; Capacitors; Dielectrics; Hafnium oxide; MOSFET circuits; Oxygen; Pollution measurement; Charge trapping; conducting atomic force microscopy (C-AFM); hafnium oxide; oxygen vacancy;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2007.911992
Filename
4408748
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