Title :
3.5 GHz bandwidth, 30 dB gain Si monolithic amplifier
Author :
Ishihara, Noboru ; Konaka, Shogo ; kamoto, T.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
A high-gain, wideband Si monolithic amplifier utilising a new parallel feedback and an adjustable peaking technique has been developed using a high-speed Si bipolar process technology. An objective of the design was to enhance gain and bandwidth performance by preventing parasitic oscillation. This IC achieves a wide bandwidth of DC-3.5 GHz, and a high gain of 20 dB. Furthermore, a noise level of 5 dB at 1 GHz and a total power dissipation of 180 mW at a power supply voltage of 6 V were attained.
Keywords :
MMIC; bipolar integrated circuits; elemental semiconductors; feedback; linear integrated circuits; microwave amplifiers; optical communication equipment; silicon; wideband amplifiers; 0 to 3.5 GHz; 180 mW; 3.5 GHz; 30 dB; 5 dB; 6 V; Si; adjustable peaking technique; bandwidth performance; high-gain; high-speed Si bipolar process; monolithic amplifier; optical transmission systems; parallel feedback; parasitic oscillation prevention; power supply voltage; satellite transmission systems; total power dissipation; wideband;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890155
