• DocumentCode
    1020390
  • Title

    1.3 mu m distributed feedback laser diode with grating accurately controlled by new fabrication technique

  • Author

    Takemoto, Ayumi ; Ohkura, Y. ; Kimura, Tomohiro ; Yoshida, Norihiro ; Kakimoto, Shinji ; Susaki, W.

  • Author_Institution
    Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
  • Volume
    25
  • Issue
    3
  • fYear
    1989
  • Firstpage
    220
  • Lastpage
    221
  • Abstract
    Control of coupling constant kappa L is a very significant technique for single longitudinal mode semiconductor laser diodes with a grating, kappa L of GaInAsP/InP distributed feedback laser diodes has been accurately controlled by an MOCVD technique and introduction of a barrier layer.
  • Keywords
    III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser cavity resonators; laser modes; laser transitions; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; GaInAsP-InP; III-V semiconductors; MOCVD technique; barrier layer; coupling constant; distributed feedback laser diode; epitaxial growth; fabrication technique; grating; integrated optics; semiconductor laser; single longitudinal mode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890157
  • Filename
    130877
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1020390