• DocumentCode
    1020417
  • Title

    IC-compatible 45 mW Ka-band GaAs transferred-electron oscillator

  • Author

    Scheiber, H. ; Lubke, K. ; Diskus, C. ; Thim, H.

  • Author_Institution
    Inst. fur Mikroelektron., Linz Univ., Austria
  • Volume
    25
  • Issue
    3
  • fYear
    1989
  • Firstpage
    223
  • Lastpage
    224
  • Abstract
    The performance of a planar field effect controlled transferred electron oscillator has been significantly improved by reducing the length of the low field regions near drain and source. 45 mW with 4.3% efficiency at 28.4 GHz and 24 mW with 3.2% at 37.4 GHz have been obtained, which is a factor of 4.5 times larger than was obtained a year ago.
  • Keywords
    III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave oscillators; 24 to 45 mW; 28.4 to 37.4 GHz; 3.2 to 4.3 percent; EHF; GaAs; IC-compatible; Ka-band; MM-wave type; MMIC compatible design; SHF; TEO; field effect controlled; microwave oscillator; millimetre wave operation; planar type; transferred-electron oscillator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890159
  • Filename
    130879
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1020417