Reduction of floating substrate effect in thin-film SOI MOSFETs

The presence of a floating substrate in SOI transistors gives rise to a decrease of threshold voltage when drain voltage is increased. When the devices are made in a very thin silicon film, the latter is completely depleted when the device is in the ´on´ state, and no part of the film can act as a floating substrate. This brings about a dramatic decrease of the so-called ´kink effect´.