• DocumentCode
    1020464
  • Title

    Annealing effect in Si-doped GaAs and AlGaAs layers grown by MBE

  • Author

    Ishikawa, Takaaki ; Inata, T. ; Kondo, K. ; Shibatomi, A.

  • Author_Institution
    , Atsugi, Japan
  • Volume
    22
  • Issue
    4
  • fYear
    1986
  • Firstpage
    189
  • Lastpage
    190
  • Abstract
    The effect of annealing on Si-doped GaAs and Al0·3Ga0·7As layers grown by MBE has been studied. In the heavily doped samples, the donor concentration decreased considerably and the broad luminescence characteristic of the SA centre reported in bulk n-GaAs appeared. The results suggest evidence that annealing converts some of the Si donors into complexes like the SA centre, which does not act as a donor.
  • Keywords
    III-V semiconductors; aluminium compounds; annealing; gallium arsenide; heavily doped semiconductors; impurity electron states; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor doping; semiconductor epitaxial layers; silicon; Al0.3Ga0.7As:Si; AlGaAs layers; GaAs:Si; III-V semiconductors; MBE; SA centre; Si dopant; annealing; broad luminescence characteristic; carrier density; donor concentration; heavily doped samples; impurity electron states; molecular beam epitaxy; photoluminescence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860132
  • Filename
    4256319
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1020464