Title :
Annealing effect in Si-doped GaAs and AlGaAs layers grown by MBE
Author :
Ishikawa, Takaaki ; Inata, T. ; Kondo, K. ; Shibatomi, A.
Author_Institution :
, Atsugi, Japan
Abstract :
The effect of annealing on Si-doped GaAs and Al0·3Ga0·7As layers grown by MBE has been studied. In the heavily doped samples, the donor concentration decreased considerably and the broad luminescence characteristic of the SA centre reported in bulk n-GaAs appeared. The results suggest evidence that annealing converts some of the Si donors into complexes like the SA centre, which does not act as a donor.
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium arsenide; heavily doped semiconductors; impurity electron states; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor doping; semiconductor epitaxial layers; silicon; Al0.3Ga0.7As:Si; AlGaAs layers; GaAs:Si; III-V semiconductors; MBE; SA centre; Si dopant; annealing; broad luminescence characteristic; carrier density; donor concentration; heavily doped samples; impurity electron states; molecular beam epitaxy; photoluminescence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860132
