Title :
Heavily Si-doped InGaAs lattice-matched to InP grown by MBE
Author :
Fujii, T. ; Inata, T. ; Ishii, K. ; Hiyamizu, S.
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
Si-doped InxGa1-xAs layers (x = 0.53) with the highest electron concentrations of 5.0 and 6.1 × 1019 cm-3 have been achieved with the use of low growth temperatures (420 and 370°C) for MBE. Nonalloyed Cr/Au ohmic contacts on these heavily doped InGaAs layers exhibited specific contact resistance as low as 1.7 × 10-8 ¿cm2.
Keywords :
III-V semiconductors; chromium; gallium arsenide; gold; heavily doped semiconductors; indium compounds; molecular beam epitaxial growth; ohmic contacts; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor-metal boundaries; silicon; 370°C; 420 degrees C; Cr/Au ohmic contacts; III-V semiconductors; In0.53Ga0.47As:Si; InxGa1-xAs layers; MBE; contact resistance; electron concentrations; heavily doped InGaAs; low growth temperatures; molecular beam epitaxy; nonalloyed contacts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860133
