DocumentCode :
1020493
Title :
Controlled stepwise motion in polysilicon microstructures
Author :
Akiyama, Terunobu ; Shono, Katsufusa
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
Volume :
2
Issue :
3
fYear :
1993
fDate :
9/1/1993 12:00:00 AM
Firstpage :
106
Lastpage :
110
Abstract :
This paper presents a polysilicon slider and a rotor capable of stepwise motion. These devices were fabricated on a silicon wafer with surface micromachine technology. The proportional relation between the velocity of motion and the frequency of the applied pulse was experimentally confirmed. The peak value of the applied pulse determines the step length. The step values observed were in the range of 10-30 nm for a bushing height of 1.0 μm and of 40-80 nm for a bushing height of 2.0 μm depending on the peak voltage of the applied pulse
Keywords :
elemental semiconductors; micromechanical devices; semiconductor technology; silicon; small electric machines; stepping motors; 1 mum; 10 to 30 nm; 2 mum; 40 to 80 nm; Si; Si wafer; bushing height; controlled stepwise motion; micromotor; peak value; peak voltage; polysilicon microstructures; polysilicon slider; proportional relation; rotor; surface micromachine technology; Electrostatics; Fabrication; Insulation; Insulators; Microactuators; Microstructure; Motion control; Shafts; Shape; Silicon;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.260254
Filename :
260254
Link To Document :
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