Analysis of a Narrow-Base Lateral IGBT With Double Buried Layer for Junction-Isolated Smart-Power Technologies

Author

Bakeroot, Benoit ; Doutreloigne, Jan ; Vanmeerbeek, Piet ; Moens, Peter

Author_Institution

Ghent Univ., Ghent

Volume

55

Issue

1

fYear

2008

Firstpage

435

Lastpage

445

Abstract

An n-type lateral insulated gate bipolar transistor (nLIGBT) with a double buried layer structure is studied. This device is integrated in an existing smart-power junction-isolated technology with a 0.35-mum CMOS core without adding extra mask steps. The double buried layer underneath the active nLIGBT not only renders this a floating device (i.e., it can be used as a high-side switch) but also suppresses the substrate current effectively, and, what is more, it introduces a buried hole diverter. As a consequence, this device has a wide safe operating area and switches off extremely fast with no current tail. The device´s static and dynamic behavior is analyzed through 2-D numerical simulations. Finally, the device is compared to the rivaling drain extended MOSFET transistor in this technology.

Keywords

CMOS integrated circuits; buried layers; insulated gate bipolar transistors; power bipolar transistors; power integrated circuits; 2-D numerical simulations; CMOS core; buried hole diverter; double buried layers; drain extended MOSFET transistor; floating device; junction-isolated smart-power technologies; n-type lateral insulated gate bipolar transistor; narrow-base lateral IGBT; size 0.35 mum; Bipolar transistors; CMOS technology; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power semiconductor switches; Semiconductor optical amplifiers; Silicon; Substrates; Voltage; Insulated gate bipolar transistor (IGBT); junction-isolated technology; power semiconductor devices; switching transient;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.911087

Filename

4408770