Title :
Discretization of flux densities in device simulations using optimum artificial diffusivity
Author :
Tang, Ting-wei ; Ieong, Mei-Kei
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
fDate :
11/1/1995 12:00:00 AM
Abstract :
The discretization scheme for the current density and the energy flux density has been revisited from a numerical diffusion point of view. A general discretization scheme for both flux densities is provided using the optimum artificial diffusivity. This formulation is equivalent to that of Scharfetter and Gummel in most cases but is numerically more transparent. It has the advantage that one formula applies to all and is not dependent on a particular form of transport coefficient. Application of this scheme to a two-dimensional simulation of MOSFETs is included
Keywords :
MOSFET; convergence of numerical methods; diffusion; semiconductor device models; MOSFETs; current density; device simulations; discretization scheme; energy flux density; numerical diffusion; optimum artificial diffusivity; transport coefficient; two-dimensional simulation; Computational modeling; Current density; Differential equations; Electrons; High definition video; Hydrodynamics; Nonlinear equations; Semiconductor devices; Temperature; Thermal conductivity;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
