Title :
Large-area, high-speed PIN detectors in GaAs
Author :
Jackson, D.J. ; Persechini, D.L.
Author_Institution :
Hughes Research Laboratories, Malibu, USA
Abstract :
A large-area, lateral PIN detector which exhibits an 8 GHz bandwidth is reported. This device topology is ideally suited for monolithic integration with IC components.
Keywords :
electric sensing devices; integrated optoelectronics; monolithic integrated circuits; photodetectors; semiconductor diodes; 8 GHz bandwidth; GaAs; IC components; detector/amplifier IC; device topology; integrated optoelectronics; large-area interdigitated device; lateral PIN detector; monolithic integration; p-i-n device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860141
