Title : 
High-frequency surface varactors
         
        
            Author : 
Feuersanger, A.E. ; Frankl, D.R.
         
        
            Author_Institution : 
General Telephone and Electronics Laboratories, Inc., Bayside, N. Y.
         
        
        
        
        
            fDate : 
5/1/1963 12:00:00 AM
         
        
        
        
            Abstract : 
Experimental surface varactors constructed from germanium and silicon, with titanium dioxide films as a dielectric, are described. Measurements have been made to determine their behavior at frequencies up to 9 kMc. The capacitance ratio and specific capacitance change are in good agreement with the theory of surface varactors. The feasibility of high-frequency operation of this device is demonstrated on epitaxial-silicon surface varactors with zero-bias cutoff frequencies above 100kMc. From the analysis of the series resistance in practical structures, cutoff frequencies in the Teracycle range appear possible.
         
        
            Keywords : 
Capacitance; Cutoff frequency; Dielectric films; Dielectric measurements; Germanium; Semiconductor films; Silicon; Surface resistance; Titanium; Varactors;
         
        
        
            Journal_Title : 
Electron Devices, IEEE Transactions on
         
        
        
        
        
            DOI : 
10.1109/T-ED.1963.15168