Title :
High-frequency surface varactors
Author :
Feuersanger, A.E. ; Frankl, D.R.
Author_Institution :
General Telephone and Electronics Laboratories, Inc., Bayside, N. Y.
fDate :
5/1/1963 12:00:00 AM
Abstract :
Experimental surface varactors constructed from germanium and silicon, with titanium dioxide films as a dielectric, are described. Measurements have been made to determine their behavior at frequencies up to 9 kMc. The capacitance ratio and specific capacitance change are in good agreement with the theory of surface varactors. The feasibility of high-frequency operation of this device is demonstrated on epitaxial-silicon surface varactors with zero-bias cutoff frequencies above 100kMc. From the analysis of the series resistance in practical structures, cutoff frequencies in the Teracycle range appear possible.
Keywords :
Capacitance; Cutoff frequency; Dielectric films; Dielectric measurements; Germanium; Semiconductor films; Silicon; Surface resistance; Titanium; Varactors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1963.15168