Title :
High-power AlGaAs laser with a thin tapered-thickness active layer
Author :
Murakami, T. ; Ohtaki, K. ; Matsubara, H. ; Yamawaki, T. ; Saito, H. ; Isshiki, K. ; Kokubo, Y. ; Kumabe, H. ; Susaki, W.
Author_Institution :
Mitsubishi Electric Corporation, LSI R&D Laboratory, Itami, Japan
Abstract :
A laser whose active layer is thinner near the mirror facet than the inner region is fabricated. Lasers with narrow beam divergence perpendicular to the junction, as narrow as 10°-20°, are obtained with little increase of threshold current. For lasers emitting at 780 nm, stable 30 mW operation at 50°C has been confirmed without obvious degradation over 4000 h.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; liquid phase epitaxial growth; semiconductor junction lasers; 30 mW operation; 50°C; 780 nm; AlGaAs laser; LPE; liquid phase epitaxy; ridged substrate; semiconductor lasers; tapered-thickness active layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860151
