Title :
Dependence of conduction-band discontinuity on aluminium mole fraction in GaAs/AlGaAs heterojunctions
Author :
Hill, Andrew J. ; Ladbrooke, P.H.
Author_Institution :
GEC, Hirst Research Centre, Wembley, UK
Abstract :
The conduction-band discontinuity dependence on aluminium mole fraction for GaAs/AlGaAs heterojunctions is discussed and is shown to have a maximum value at a mole fraction of approximately 0.45.
Keywords :
III-V semiconductors; aluminium compounds; band structure of crystalline semiconductors and insulators; conduction bands; gallium arsenide; p-n heterojunctions; Al mole fraction; GaAs/AlGaAs heterojunctions; III-V semiconductors; conduction-band discontinuity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860152
