Title :
Reducing Ground-Bounce Noise and Stabilizing the Data-Retention Voltage of Power-Gating Structures
Author :
Kim, Suhwan ; Choi, Chang Jun ; Jeong, Deog-Kyoon ; Kosonocky, Stephen V. ; Park, Sung Bae
Author_Institution :
Seoul Nat. Univ., Seoul
Abstract :
Power gating is one of the most effective techniques in reducing leakage power, which increases exponentially with device scaling. However, large ground bounces during abrupt changes of power mode may cause unwanted transitions in neighboring circuits, which should still be operating normally. We analyzed this ground-bounce noise and reduced it with novel power-gating structures that utilize holistic integrated device-circuit-architecture approaches. We control the amount of charge in the intermediate nodes of the circuit that passes through the sleep transistors during the wake-up transition and stabilize the minimum virtual power supply voltage required for data retention. These techniques have been proven in silicon using 65-nm bulk CMOS technology.
Keywords :
CMOS integrated circuits; integrated circuit noise; CMOS technology scaling; data-retention voltage stability; ground-bounce noise reduction; holistic integrated device-circuit-architecture approaches; power-gating structures; virtual power supply voltage; CMOS technology; Energy consumption; Leakage current; MOSFETs; Noise reduction; Power supplies; Power system reliability; Switches; Switching circuits; Voltage; CMOS technology scaling; device/circuit codesign; ground-bounce noise; power-gating technique;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.911067