DocumentCode
1020719
Title
Very fine corrugations formed on InP by wet chemical etching and electron beam lithography
Author
Inamura, E. ; Tamura, Shinji ; Miyamoto, Yutaka ; Furuya, Keiichi ; Suematsu, Yasuharu
Author_Institution
Tokyo Inst. of Technol., Japan
Volume
25
Issue
3
fYear
1989
Firstpage
238
Lastpage
240
Abstract
Corrugations of 70 nm pitch and 100 nm depth were formed on InP using electron beam lithography and wet chemical etching giving the material selective and anisotropic qualities. For this purpose, a thin GaInAs layer grown by MOVPE was used as an etching mask to suppress the undercut etching so as to form very fine structures.
Keywords
III-V semiconductors; electron beam lithography; etching; gallium arsenide; indium compounds; masks; semiconductor epitaxial layers; semiconductor technology; vapour phase epitaxial growth; 100 nm; 70 nm; III-V semiconductors; InP; InP-GaInAs; MOVPE grown GaInAs mask; electron beam lithography; etching mask; fine corrugations; undercutting suppression; wet chemical etching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890169
Filename
130889
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