• DocumentCode
    1020742
  • Title

    Narrow-linewidth AlGaAs/GaAs multiple quantum well distributed feedback lasers

  • Author

    Kojima, Keisuke ; Hara, Kentaro ; Kameya, M. ; Kyuma, K.

  • Author_Institution
    Central Res. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
  • Volume
    25
  • Issue
    3
  • fYear
    1989
  • Firstpage
    240
  • Lastpage
    241
  • Abstract
    Long-cavity AlGaAs/GaAs multiple quantum well distributed feedback (DFB) lasers were fabricated. The minimum linewidth was as narrow as 1.5 MHz, which is the narrowest value yet reported for AlGaAs/GaAs DFB and distributed Bragg reflector (DBR) lasers. The measurement of the linewidth enhancement factor alpha is also reported.
  • Keywords
    III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; laser cavity resonators; optical waveguides; semiconductor junction lasers; semiconductor quantum wells; spectral line breadth; 1.5 MHz; AlGaAs-GaAs; DFB lasers; III-V semiconductors; distributed feedback lasers; linewidth enhancement factor; long cavity type; measurement; minimum linewidth; multiple quantum well; narrow linewidth; ridged waveguide; second order gratings; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890170
  • Filename
    130890