Title :
Ga0.47In0.53As field-effect transistors with a lattice-mismatched reduced leakage current GaAs gate
Author :
Garbinski, P.A. ; Chen, C.Y. ; Cho, Andrew Y.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
A lattice-mismatched GaAs gate Ga0.47In0.47As field-effect transistor (LMG-FET) with significantly reduced reverse gate leakage current is reported. The mechanism responsible for this reduction by over two orders of magnitude over previous work has been identified; it is attributed to the confinement of misfit dislocations originating at the GaAs/InGaAs interface. The LMG-FET had a gate leakage current of 0.48 ¿A at ¿ V, and an extrinsic DC transconductance of 104 mS/ mm for a 1.4 ¿m gate length and 240 ¿m gate width. Further refinements in crystal growth should lead to even lower values of leakage current, making this technology attractive for high-speed logic, as well as lightwave optoelectronic integration.
Keywords :
III-V semiconductors; field effect integrated circuits; field effect transistors; gallium arsenide; indium compounds; integrated logic circuits; integrated optoelectronics; Ga0.47In0.53As; GaAs gate; GaAs/InGaAs interface; field-effect transistors; high-speed logic; lattice mismatch; leakage current reduction; lightwave optoelectronic integration; monolithic IC applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860162
