Title :
Monolithic integration of InGaAs/InP DFB lasers and InGaAs/InAlAs MQW optical modulators
Author :
Kawamura, Yuriko ; Wakita, Ken ; Itaya, Y. ; Yoshikuni, Y. ; Asahi, H.
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
The first successful monolithic integration of InGaAsP/InP distributed feedback (DFB) lasers and InGaAs/InAlAs multiple quantum well (MQW) optical modulators using LPE (liquid phase epitaxy)/MBE (modlecular beam epitaxy) hybrid growth reported. A 14% light output modulation is observed in this integrated device.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; liquid phase epitaxial growth; molecular beam epitaxial growth; optical modulation; optical workshop techniques; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; DFB lasers; III-V semiconductors; InGaAs/InAlAs; InGaAsP/InP; LPE; MBE; MQW optical modulators; distributed feedback; hybrid growth; integrated optoelectronics; liquid phase epitaxy; molecular beam epitaxy; monolithic integration; multiple quantum well; semiconductor growth; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860166
