DocumentCode
1020817
Title
MOS transconductors and integrators with high linearity
Author
Tsividis, Y. ; Czarnul, Z. ; Fang, S.C.
Author_Institution
Columbia University, Department of Electrical Engineering and Center for Telecommunications Research, New York, USA
Volume
22
Issue
5
fYear
1986
Firstpage
245
Lastpage
246
Abstract
MOS transconductors are discussed in which the transistors determining the transconductance do not carry bias current, operate with large gate-source voltage, and are signal-driven in such a way that their nonlinearities are eliminated. An integrator implemented using one of the proposed circuits exhibited measured total harmonic distortion of less than 0.1% for differential input signals of 2.5 V p-p, and less than 1% for 5 V p-p.
Keywords
active networks; field effect integrated circuits; integrating circuits; MOS transconductors; active networks; integrators; large gate-source voltage; monolithic IC; nonlinearity elimination; signal-driven;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860168
Filename
4256357
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