• DocumentCode
    1020817
  • Title

    MOS transconductors and integrators with high linearity

  • Author

    Tsividis, Y. ; Czarnul, Z. ; Fang, S.C.

  • Author_Institution
    Columbia University, Department of Electrical Engineering and Center for Telecommunications Research, New York, USA
  • Volume
    22
  • Issue
    5
  • fYear
    1986
  • Firstpage
    245
  • Lastpage
    246
  • Abstract
    MOS transconductors are discussed in which the transistors determining the transconductance do not carry bias current, operate with large gate-source voltage, and are signal-driven in such a way that their nonlinearities are eliminated. An integrator implemented using one of the proposed circuits exhibited measured total harmonic distortion of less than 0.1% for differential input signals of 2.5 V p-p, and less than 1% for 5 V p-p.
  • Keywords
    active networks; field effect integrated circuits; integrating circuits; MOS transconductors; active networks; integrators; large gate-source voltage; monolithic IC; nonlinearity elimination; signal-driven;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860168
  • Filename
    4256357