Title :
Low dissipation current GaAs prescaler IC
Author :
Hasegawa, K. ; Uenoyama, T. ; Nishii, K. ; Onuma, T.
Author_Institution :
Matsushita Electric Industrial Co. Ltd., Semiconductor Research Center, Moriguchi, Japan
Abstract :
A 1 GHz variable modulus freqency divider with very low dissipation current has been developed. Using a high-transconductance (200¿250 mS/mm) FET by Pt burying technology and series gating source-coupled FET logic, the dissipation current of the fabricated IC was reduced to 3.2 mA at 1 GHz operation.
Keywords :
III-V semiconductors; digital integrated circuits; field effect integrated circuits; frequency dividers; gallium arsenide; integrated logic circuits; 1 GHz; D-type flip-flops; GaAs; III-V semiconductors; Pt burying technology; SCFL circuits; digital IC; high transconductance FET; low dissipation current; prescaler IC; series gating type; source-coupled FET logic; variable modulus frequency divider;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860172
