DocumentCode
1020866
Title
Low-Noise Avalanche Photodiode in Standard 0.35-μm CMOS Technology
Author
Pancheri, Lucio ; Scandiuzzo, Mauro ; Stoppa, David ; Betta, Gian-Franco Dalla
Author_Institution
Univ. of Trento, Trento
Volume
55
Issue
1
fYear
2008
Firstpage
457
Lastpage
461
Abstract
In this paper, we report on an avalanche photodiode (APD) fabricated in a standard 0.35-mum CMOS technology. The main electrooptical characteristics of the device are presented, showing a remarkably low-noise factor if compared to other CMOS APDs. An estimation of the noise properties of a pixel based on the proposed photodiode with charge-amplifier readout is performed, showing that it could have an improved noise performance with respect to a standard photodiode-based pixel.
Keywords
CMOS integrated circuits; avalanche photodiodes; electro-optical devices; integrated optoelectronics; readout electronics; semiconductor device noise; APD fabrication; CMOS technology; charge-amplifier readout; electrooptical characteristics; low-noise avalanche photodiode; photodiode-based pixel; size 0.35 mum; Avalanche photodiodes; Breakdown voltage; CMOS image sensors; CMOS technology; Communications technology; Electrooptic devices; Fabrication; Helium; Image sensors; Noise shaping; Avalanche Photodiodes (APDs); CMOS; shot noise;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2007.910570
Filename
4408804
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