DocumentCode

1020913

Title

An expitaxial grown-diffused silicon transistor

Author

Allen, C.C. ; Runyan, W.R.

Volume

10

Issue

4

fYear

1963

fDate

7/1/1963 12:00:00 AM

Firstpage

289

Lastpage

290

Keywords

Atomic layer deposition; Boron; Charge carrier density; Delay effects; Doping; Impurities; Iron; Silicon; Space vector pulse width modulation; Steady-state;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1963.15195

Filename

1473498