DocumentCode
1020985
Title
Evaluation of RF-Stress Effect on Class-E MOS Power-Amplifier Efficiency
Author
Yuan, J.S. ; Ma, J.
Author_Institution
Central Florida Univ., Orlando
Volume
55
Issue
1
fYear
2008
Firstpage
430
Lastpage
434
Abstract
RF-stress effects on MOS power-amplifier performance are studied. The class-E power-amplifier power efficiency as a function of breakdown (BD) location has been evaluated. The power efficiency degrades with gate-oxide RF stress due to increased gate leakage current and reduced output voltage. The degradation is enhanced when the BD location is closer to the drain side than the source side.
Keywords
CMOS analogue integrated circuits; power amplifiers; semiconductor device breakdown; MOS power-amplifier; RF-stress effect; breakdown location; Analytical models; CMOS technology; Circuits; Degradation; Electric breakdown; Oscillators; Radio frequency; Radiofrequency amplifiers; Stress; Voltage; Breakdown (BD); MOS devices; RF stress; class-E power amplifier (PA); power efficiency;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2007.911092
Filename
4408816
Link To Document