Title :
Evaluation of RF-Stress Effect on Class-E MOS Power-Amplifier Efficiency
Author :
Yuan, J.S. ; Ma, J.
Author_Institution :
Central Florida Univ., Orlando
Abstract :
RF-stress effects on MOS power-amplifier performance are studied. The class-E power-amplifier power efficiency as a function of breakdown (BD) location has been evaluated. The power efficiency degrades with gate-oxide RF stress due to increased gate leakage current and reduced output voltage. The degradation is enhanced when the BD location is closer to the drain side than the source side.
Keywords :
CMOS analogue integrated circuits; power amplifiers; semiconductor device breakdown; MOS power-amplifier; RF-stress effect; breakdown location; Analytical models; CMOS technology; Circuits; Degradation; Electric breakdown; Oscillators; Radio frequency; Radiofrequency amplifiers; Stress; Voltage; Breakdown (BD); MOS devices; RF stress; class-E power amplifier (PA); power efficiency;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.911092
