Title :
Improved InP/InGaAs/InP PIN detector response using a transparent conductor contact
Author :
Russell, J.L. ; Kellert, F. ; Ehlers, E. ; Monahan, D.
Author_Institution :
Hewlett Packard Co., Santa Rosa, CA, USA
Abstract :
The elimination of the spatial variation in the frequency response of large area pin photodetectors is described using indium tin oxide as a transparent contact. The I/V, C/V, and relative frequency response characteristics are reported for devices fabricated with and without the indium tin oxide. The devices have active area diameters of 25.0 and 80.0 mu m. Responsivities were 0.53 and 0.61 A/W for photodetectors with and without the ITO contact, respectively.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; p-i-n diodes; photodiodes; 25 micron; 80 micron; C/V characteristic; I/V characteristic; ITO contact; InP-InGaAs-InP; InSnO; active area diameters; frequency response; large area pin photodetectors; p-i-n photodetector; photodiodes; responsivities; semiconductors; transparent conductor contact; uniform detector response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900793
