Title :
Spin-on diffused GaSb mesa photodiode with high breakdown voltages
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Technische Elektronik, Mÿnchen, West Germany
Abstract :
GaSb mesa photodiodes have been fabricated by Zn diffusion from spin-on film sources. For the first time, breakdown voltages up to 30 V are reported on diffused GaSb diodes. Broadband responsivity with an external quantum efficiency of 60% at 1.7 ¿m has been obtained without antireflection coating.
Keywords :
III-V semiconductors; electric breakdown of solids; gallium compounds; photodiodes; GaSb mesa photodiode; antireflection coating; breakdown voltages; external quantum efficiency; responsivity; spin-on film sources;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860190
