DocumentCode
1021022
Title
Spin-on diffused GaSb mesa photodiode with high breakdown voltages
Author
Heinz, C.
Author_Institution
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Technische Elektronik, Mÿnchen, West Germany
Volume
22
Issue
5
fYear
1986
Firstpage
276
Lastpage
277
Abstract
GaSb mesa photodiodes have been fabricated by Zn diffusion from spin-on film sources. For the first time, breakdown voltages up to 30 V are reported on diffused GaSb diodes. Broadband responsivity with an external quantum efficiency of 60% at 1.7 ¿m has been obtained without antireflection coating.
Keywords
III-V semiconductors; electric breakdown of solids; gallium compounds; photodiodes; GaSb mesa photodiode; antireflection coating; breakdown voltages; external quantum efficiency; responsivity; spin-on film sources;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860190
Filename
4256379
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