DocumentCode :
1021026
Title :
A calculation of the carrier distribution in the p-n junctions at high injection level
Author :
Esaki, L.
Volume :
10
Issue :
5
fYear :
1963
fDate :
9/1/1963 12:00:00 AM
Firstpage :
333
Lastpage :
333
Keywords :
Cities and towns; Diodes; Electric resistance; Gallium arsenide; Luminescence; Manganese alloys; P-n junctions; Tellurium; Voltage; Zinc;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1963.15208
Filename :
1473511
Link To Document :
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