Title :
Effect of doping on the absorption edge of GaAs
Author :
Braunstein, Richard ; Pankove, J.I.
fDate :
9/1/1963 12:00:00 AM
Keywords :
Absorption; Doping; Fabry-Perot; Gallium arsenide; Glass; Laboratories; Laser beams; Laser modes; Low-frequency noise; Semiconductor device noise;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1963.15217
