Low phase noise heterojunction bipolar transistor oscillator

Author

Ali Khatibzadeh, M. ; Bayraktaroglu, B.

Author_Institution

Texas Instrum., Dallas, TX, USA

Volume

26

Issue

16

fYear

1990

Firstpage

1246

Lastpage

1248

Abstract

A low phase noise, heterojunction bipolar transistor (HBT) oscillator has been designed and fabricated for operation at X-band. The common emitter oscillator employs a high-Q dielectric resonator as the parallel feedback element between the base and collector terminals. Series capacitive feedback is used in the emitter to enhance the oscillator´s negative output impedance. Single-sideband FM noise levels of -76 dBc/Hz and -102 dBc/Hz have been achieved at 1 kHz and 10 kHz frequency offsets, respectively, for an 11.06 GHz carrier frequency. This is one of the lowest phase noise levels ever reported for an X-band solid-state transistor oscillator.

Keywords

dielectric resonators; electron device noise; heterojunction bipolar transistors; hybrid integrated circuits; microwave integrated circuits; microwave oscillators; 11.06 GHz; DRO; HBT oscillator; SSB FM noise levels; X-band; capacitive feedback; carrier frequency; common emitter oscillator; frequency offsets; heterojunction bipolar transistor; high-Q dielectric resonator; low phase noise; negative output impedance; parallel feedback element; solid-state transistor oscillator;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900803

Filename

130913