• DocumentCode
    1021125
  • Title

    In-phase emission from index-guided laser array up to 400 mW

  • Author

    Welch, D.F. ; Cross, P. ; Scifres, D. ; Streifer, W. ; Burnham, R.D.

  • Author_Institution
    Spectra Diode Laboratories, San Jose, USA
  • Volume
    22
  • Issue
    6
  • fYear
    1986
  • Firstpage
    293
  • Lastpage
    294
  • Abstract
    Phased-array lasers with real-refractive-index waveguides have been grown by metalorganic chemical vapour deposition. The index guides are coupled via `Y¿-type coupling regions and the laser array emits with all elements in phase. Powers of over 400 mW are obtained with no indication of a change in the far-field pattern.
  • Keywords
    III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; optical waveguides; semiconductor junction lasers; GaAs/Al0.4Ga0.6As; far-field pattern; in phase emission; index guided phase locked arrays; metalorganic chemical vapour deposition; phase array lasers; up to 400 mW;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860199
  • Filename
    4256390