DocumentCode
1021125
Title
In-phase emission from index-guided laser array up to 400 mW
Author
Welch, D.F. ; Cross, P. ; Scifres, D. ; Streifer, W. ; Burnham, R.D.
Author_Institution
Spectra Diode Laboratories, San Jose, USA
Volume
22
Issue
6
fYear
1986
Firstpage
293
Lastpage
294
Abstract
Phased-array lasers with real-refractive-index waveguides have been grown by metalorganic chemical vapour deposition. The index guides are coupled via `Y¿-type coupling regions and the laser array emits with all elements in phase. Powers of over 400 mW are obtained with no indication of a change in the far-field pattern.
Keywords
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; optical waveguides; semiconductor junction lasers; GaAs/Al0.4Ga0.6As; far-field pattern; in phase emission; index guided phase locked arrays; metalorganic chemical vapour deposition; phase array lasers; up to 400 mW;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860199
Filename
4256390
Link To Document