Title :
Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe
Author :
Rao, Mulpuri V. ; Kruppa, W.
Author_Institution :
George Mason University, Department of Electrical & Computer Engineering, Fairfax, USA
Abstract :
Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe was discussed. Electrical activation of more than 100%, a broad implant profile and an average electron mobility of 3000 cm2/Vs are observed in layers implanted with a dose of 2 × 1013 cm¿2 at 260 keV and annealed at 670°C for 15 min. The results of photoluminescence measurements are also presented.
Keywords :
III-V semiconductors; carrier mobility; doping profiles; gallium arsenide; indium compounds; ion implantation; iron; luminescence of inorganic solids; photoluminescence; semiconductor doping; semiconductor epitaxial layers; silicon; In0.53Ga0.47As:Fe; Si; electron mobility; ion implantation; photoluminescence measurements; semiconductor epitaxial layers; semiconductor material;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860204
