• DocumentCode
    1021181
  • Title

    Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe

  • Author

    Rao, Mulpuri V. ; Kruppa, W.

  • Author_Institution
    George Mason University, Department of Electrical & Computer Engineering, Fairfax, USA
  • Volume
    22
  • Issue
    6
  • fYear
    1986
  • Firstpage
    299
  • Lastpage
    301
  • Abstract
    Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe was discussed. Electrical activation of more than 100%, a broad implant profile and an average electron mobility of 3000 cm2/Vs are observed in layers implanted with a dose of 2 × 1013 cm¿2 at 260 keV and annealed at 670°C for 15 min. The results of photoluminescence measurements are also presented.
  • Keywords
    III-V semiconductors; carrier mobility; doping profiles; gallium arsenide; indium compounds; ion implantation; iron; luminescence of inorganic solids; photoluminescence; semiconductor doping; semiconductor epitaxial layers; silicon; In0.53Ga0.47As:Fe; Si; electron mobility; ion implantation; photoluminescence measurements; semiconductor epitaxial layers; semiconductor material;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860204
  • Filename
    4256395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1021181