Title :
CMOS-compatible silicon devices on thin SiO2 membranes
Author :
Gajda, M.A. ; Ahmed, Hameeza ; Dodgson, J.
Author_Institution :
Cavendish Lab., Cambridge Univ.
fDate :
1/6/1994 12:00:00 AM
Abstract :
A novel method of fabricating low power silicon-based devices on thermally insulating membranes for use in sensing applications is presented. The devices can be operated at temperatures of ~250°C with power consumption not exceeding 25mW
Keywords :
CMOS integrated circuits; SIMOX; electric sensing devices; elemental semiconductors; integrated circuit technology; membranes; silicon; silicon compounds; sputter etching; 25 mW; 250 C; CMOS-compatible Si devices; Si-SiO2; SiO2; fabrication; low power Si devices; sensing applications; thermally insulating membranes; thin SiO2 membranes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940046
