• DocumentCode
    1021219
  • Title

    CMOS-compatible silicon devices on thin SiO2 membranes

  • Author

    Gajda, M.A. ; Ahmed, Hameeza ; Dodgson, J.

  • Author_Institution
    Cavendish Lab., Cambridge Univ.
  • Volume
    30
  • Issue
    1
  • fYear
    1994
  • fDate
    1/6/1994 12:00:00 AM
  • Firstpage
    28
  • Lastpage
    30
  • Abstract
    A novel method of fabricating low power silicon-based devices on thermally insulating membranes for use in sensing applications is presented. The devices can be operated at temperatures of ~250°C with power consumption not exceeding 25mW
  • Keywords
    CMOS integrated circuits; SIMOX; electric sensing devices; elemental semiconductors; integrated circuit technology; membranes; silicon; silicon compounds; sputter etching; 25 mW; 250 C; CMOS-compatible Si devices; Si-SiO2; SiO2; fabrication; low power Si devices; sensing applications; thermally insulating membranes; thin SiO2 membranes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940046
  • Filename
    260581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1021219