Title :
Strained layer AlGaAs-GaAs-InGaAs real-space transferred electron devices
Author :
Favaro, M.E. ; Miller, Lauren M. ; Coleman, J.J. ; Kim, Jung-Ho ; Wayman, C.M.
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
Experimental results of two AlGaAs-GaAs real-space transferred electron devices, the negative resistance field-effect transistor and charge-injection transistor, which incorporates a strained layer In0.22Ga0.78As channel are reported. The negative differential resistance in the drain circuit has a drain current peak-to-valley ratio of more than 1200 at room temperature.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; negative resistance; AlGaAs-GaAs-InGaAs; In 0.22Ga 0.78As channel; charge-injection transistor; drain current peak-to-valley ratio; negative differential resistance; negative resistance field-effect transistor; real-space transferred electron devices; room temperature; semiconductors; strained layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900814
