DocumentCode
1021232
Title
Continuous formation of CoCr films on PEN tape by facing targets sputtering
Author
Akiyama, S. ; Sumide, M. ; Nakagawa, S. ; Naoe, M.
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Volume
25
Issue
5
fYear
1989
fDate
9/1/1989 12:00:00 AM
Firstpage
4189
Lastpage
4191
Abstract
In order to establish the technique of continuous formation of Co-Cr film on PEN (polyethylene naphthalate) tape, the sputtering and deposition area in the facing-targets sputtering (FTS) system was divided into two areas. In the first area, an initial underlayer as thin as 200 Å with a well-oriented c -axis was formed. In the second area, a main layer as thick as 1500 Å was formed on the initial underlayer at a rate of 500 Å/min; good c -axis orientation facilitated epitaxial growth. It was found that the FTS method can suppress the c -axis canting of the Co-Cr crystallites without a significant increase of total deposition time. Thermoplastic PEN tape can be used without heat damage, instead of the heat-resistant polyimide, as a substrate for Co-Cr films for the perpendicular magnetic recording tape
Keywords
chromium alloys; cobalt alloys; magnetic tapes; magnetic thin films; polymer films; sputtered coatings; vapour phase epitaxial growth; 1500 Å; 200 Å; CoCr films; FTS method; PEN tape; c-axis orientation; continuous formation; deposition area; deposition time; epitaxial growth; facing targets sputtering; initial underlayer; main layer; perpendicular magnetic recording tape; perpendicular recording; polyethylene naphthalate; substrate; thermoplastic; Crystallization; Epitaxial growth; Kinetic energy; Magnetic films; Perpendicular magnetic recording; Plasma measurements; Plasma temperature; Polymer films; Sputtering; Substrates;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.42564
Filename
42564
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