Title :
Reverse current in Ge-GaAs n-n heterojunctions
Author :
Howard, W.E. ; Fang, F.F.
fDate :
9/1/1963 12:00:00 AM
Keywords :
Contracts; Electrons; Elementary particle vacuum; Frequency; Heterojunctions; Laboratories; Metal-insulator structures; Physics; Telephony; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1963.15229
