• DocumentCode
    1021290
  • Title

    Non-steady-state photovoltage in crystals with long photoconductivity relaxation times

  • Author

    Sokolov, I.A. ; Stepanov, S.I.

  • Author_Institution
    AF Ioffe Phys.-Tech. Inst., Leningrad, USSR
  • Volume
    26
  • Issue
    16
  • fYear
    1990
  • Firstpage
    1275
  • Lastpage
    1277
  • Abstract
    The effect of non-steady-state photovoltage in photoconductive crystals for high excitation frequencies is discussed. The theoretical analysis based on the widely accepted model of a photoconductor with one partially compensated donor level and a finite photoelectron lifetime is in reasonable agreement with the experiments on cubic BSO crystals. Average lifetimes of photocarriers in the samples were estimated to be tau =10-4 s for lambda =442 nm and T=3*10-6 s for lambda =663 nm.
  • Keywords
    bismuth compounds; crystals; photoconducting materials; photoconductivity; 1E-4 s; 3E-6 s; 442 nm; 663 nm; Bi12SiO20; cubic BSO crystals; finite photoelectron lifetime; high excitation frequencies; lifetimes of photocarriers; long photoconductivity relaxation times; model; nonsteady state photovoltage; photoconductive crystals; photoconductor with one partially compensated donor level;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900821
  • Filename
    130931